SILICON MOLECULAR BEAM EPITAXY : A COMPREHENSIVE BIBLIOGRAPHY 1962-82

Segregation and trapping of erbium during silicon molecular beam epitaxy

Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si~100! at 600 °C. Once a critical Er surface areal density of 2310 Er/cm is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si~100! is fully avoided when growth is performed in an oxygen background pressure of ; 10 mbar, due to th...

Carbon incorporation in Si12yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source

Pseudomorphic Si12yCy alloys on silicon ~100! were grown by molecular beam epitaxy using a single effusion source of silicon contained in a graphite crucible, producing carbon concentrations of y50.008. The behavior of carbon incorporation using this source was studied as a function of growth temperature using x-ray diffraction and infrared spectroscopy, and was compared to previous studies, wh...

Basics of Molecular Beam Epitaxy (MBE)

A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...

Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy.

Because of their importance in fundamental research and possible applications in nanotechnology and nanoelectronics, semiconductor nanowires have attracted much interest. In addition to the growth itself, the control of the size and location is an essential problem. Here we show the growth of ordered arrays of vertically aligned silicon nanowires by molecular beam epitaxy using prepatterned arr...

Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy